Graded Crystalline HfO₂ Gate Dielectric Layer for High-k/Ge MOS Gate Stack
نویسندگان
چکیده
Germanium (Ge) has gained great attention not only for future nanoelectronics but back-end of line (BEOL) compatible monolithic three-dimensional (M3D) integration recently. For high performance and low power devices, various high-k oxide/Ge gate stacks including ferroelectric oxides have been investigated. Here, we demonstrate atomic layer deposited (ALD) polycrystalline (p-) HfO 2 /GeO xmlns:xlink="http://www.w3.org/1999/xlink">x /Ge stack with an amorphous (a-) capping layer. The consecutively a-HfO improves hysteretic behaviors (ΔV) interface state density (D xmlns:xlink="http://www.w3.org/1999/xlink">it ) the p-HfO stack. Furthermore, leakage current (J) is significantly reduced (×100) by passivating paths through grain boundaries . proposed graded crystallinity suggests possible high-k/Ge further optimized Ge MOS structures.
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2021
ISSN: ['2168-6734']
DOI: https://doi.org/10.1109/jeds.2021.3058631